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Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Note 6: All limits reflect losses of external components, including a 0.8dB loss at fIF = 350MHz due to the 4:1 transformer. Output
measurements were taken at IF outputs of the Typical Application Circuit .
Note 7: 100% production tested for functionality.
Note 8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50 I source.
Note 9: Not production tested.
Note 10: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects
of all SNR degradations in the mixer, including the LO noise, as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers .
Typical Operating Characteristics
( Typical Application Circuit optimized for the Standard RF Band (see Table 1) . V CC = 5.0V, f RF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P RF = -5dBm, P LO = 0dBm, T C = +25°C, unless otherwise noted.)
10
9
8
CONVERSION GAIN vs. RF FREQUENCY
T C = -40°C
10
9
8
CONVERSION GAIN vs. RF FREQUENCY
10
9
8
CONVERSION GAIN vs. RF FREQUENCY
7
T C = +85°C
T C = +25°C
7
P LO = -6dBm, -3dBm, 0dBm, +3dBm
7
V CC = 4.75V, 5.0V, 5.25V
6
6
6
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
27
26
T C = +85°C
P RF = -5dBm/TONE
27
26
P LO = +3dBm
P RF = -5dBm/TONE
P LO = 0dBm
27
26
P RF = -5dBm/TONE
V CC = 5.25V
25
25
25
24
24
P LO = -6dBm
24
V CC = 5.0V
V CC = 4.75V
23
22
T C = +25°C
T C = -40°C
23
22
P LO = -3dBm
23
22
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
7
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